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| TIP110, TIP111, TIP112 NPN SILICON POWER DARLINGTONS Copyright (c) 1997, Power Innovations Limited, UK DECEMBER 1971 - REVISED MARCH 1997 q Designed for Complementary Use with TIP115, TIP116 and TIP117 50 W at 25C Case Temperature 4 A Continuous Collector Current Minimum hFE of 500 at 4 V, 2 A B C E q q q TO-220 PACKAGE (TOP VIEW) 1 2 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING TIP110 Collector-base voltage (IE = 0) TIP111 TIP112 TIP110 Collector-emitter voltage (IB = 0) Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base current Continuous device dissipation at (or below) 25C case temperature (see Note 2) Continuous device dissipation at (or below) 25C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. TIP111 TIP112 V EBO IC ICM IB Ptot Ptot 1/2LIC 2 Tj Tstg TL VCEO VCBO SYMBOL VALUE 60 80 100 60 80 100 5 4 6 50 50 2 25 -65 to +150 -65 to +150 260 V A A mA W W mJ C C C V V UNIT This value applies for tp 0.3 ms, duty cycle 10%. Derate linearly to 150C case temperature at the rate of 0.4 W/C. Derate linearly to 150C free air temperature at the rate of 16 mW/C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 5 mA, R BE = 100 , VBE(off) = 0, RS = 0.1 , VCC = 20 V. PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1 TIP110, TIP111, TIP112 NPN SILICON POWER DARLINGTONS DECEMBER 1971 - REVISED MARCH 1997 electrical characteristics at 25C case temperature PARAMETER V (BR)CEO Collector-emitter breakdown voltage Collector-emitter cut-off current Collector cut-off current Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter voltage Parallel diode forward voltage IC = 30 mA (see Note 5) VCE = 30 V V CE = 40 V V CE = 50 V VCB = 60 V V CB = 80 V V CB = 100 V VEB = VCE = V CE = IB = VCE = IE = 5V 4V 4V 8 mA 4V 4A IB = 0 IB = 0 IB = 0 IE = 0 IE = 0 IE = 0 IC = 0 IC = 1 A IC = 2 A IC = 2 A IC = 2 A IB = 0 (see Notes 5 and 6) (see Notes 5 and 6) (see Notes 5 and 6) (see Notes 5 and 6) 1000 500 2.5 2.8 3.5 V V V TEST CONDITIONS TIP110 IB = 0 TIP111 TIP112 TIP110 TIP111 TIP112 TIP110 TIP111 TIP112 MIN 60 80 100 2 2 2 1 1 1 2 mA mA mA V TYP MAX UNIT ICEO ICBO IEBO hFE VCE(sat) VBE VEC NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 s, duty cycle 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. resistive-load-switching characteristics at 25C case temperature PARAMETER ton toff TEST CONDITIONS IC = 2 A V BE(off) = -5 V IB(on) = 8 mA RL = 15 MIN IB(off) = -8 mA tp = 20 s, dc 2% TYP 2.6 4.5 MAX UNIT s s Turn-on time Turn-off time Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. PRODUCT INFORMATION 2 TIP110, TIP111, TIP112 NPN SILICON POWER DARLINGTONS DECEMBER 1971 - REVISED MARCH 1997 TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V 20000 10000 hFE - Typical DC Current Gain TCS110AA COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT 2*0 tp = 300 s, duty cycle < 2% IB = IC / 100 1*5 TCS110AB TC = -40C TC = 25C TC = 100C 1*0 1000 0*5 TC = -40C TC = 25C TC = 100C 0 0*5 1*0 IC - Collector Current - A 5*0 VCE = 4 V tp = 300 s, duty cycle < 2% 100 0*5 1*0 IC - Collector Current - A 5*0 Figure 1. Figure 2. BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT 3*0 VBE(sat) - Base-Emitter Saturation Voltage - V TC = -40C TC = 25C TC = 100C TCS110AC 2*5 2*0 1*5 1*0 IB = IC / 100 tp = 300 s, duty cycle < 2% 0*5 0*5 1*0 IC - Collector Current - A 5*0 Figure 3. PRODUCT INFORMATION 3 TIP110, TIP111, TIP112 NPN SILICON POWER DARLINGTONS DECEMBER 1971 - REVISED MARCH 1997 MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA 10 SAS110AA IC - Collector Current - A 1*0 0*1 TIP110 TIP111 TIP112 0.01 1*0 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE 60 Ptot - Maximum Power Dissipation - W TIS110AA 50 40 30 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature - C Figure 5. PRODUCT INFORMATION 4 TIP110, TIP111, TIP112 NPN SILICON POWER DARLINGTONS DECEMBER 1971 - REVISED MARCH 1997 MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO220 4,70 4,20 o 3,96 3,71 10,4 10,0 2,95 2,54 6,6 6,0 15,90 14,55 1,32 1,23 see Note B see Note C 6,1 3,5 0,97 0,61 1 2 3 1,70 1,07 14,1 12,7 2,74 2,34 5,28 4,88 2,90 2,40 0,64 0,41 VERSION 1 VERSION 2 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. MDXXBE PRODUCT INFORMATION 5 TIP110, TIP111, TIP112 NPN SILICON POWER DARLINGTONS DECEMBER 1971 - REVISED MARCH 1997 IMPORTANT NOTICE Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS. Copyright (c) 1997, Power Innovations Limited PRODUCT INFORMATION 6 |
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